ＩＮＫ0003AＸ SERIES
High speed switching
Silicon N-channel MOSFET
DESCRIPTION
INK0003AX is a Silicon N-channel MOSFET.
This product is most suitable for low voltage
use such as portable machinery , because of low
voltage drive and low on resistance.
OUTLINE DRAWING
INK0003AT2 (PRELIMINARY)
INK0003AM1
2.1
0.2
0.8
0.2
0.425
1.25
Unit：mm
0.425
0.25
0.4
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=0.6½1.2V
・Low on Resistance. Ron=0.9Ω(TYP)
・High speed switching.
・Small package for easy mounting.
1.2
0.8
0.65
①
②
③
①
②
③
2.0
1.3
0.4
0.9
0.65
0.7
APPLICATION
high speed switching , Analog switching
JEITA, JEDEC：－
ISAHAYA：T-USM
TERMINAL CONNECTOR
①：GATE
②：SOURCE
③：DRAIN
INK0003AU1
1.6
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：GATE
②：SOURCE
③：DRAIN
INK0003AC1
2.5
0.4
0.5
1.5
0.5
EQUIVALENT CIRCUIT
D
0.4
0.8
0.3
0½0.1
0.15
①
②
③
0½0.1
0.16
0.4
0.5
①
②
③
1.6
1.0
S
0.7
0.55
0.15
1.1
JEITA：SC-75A
JEDEC：－
TERMINAL CONNECTOR
①：GATE
②：SOURCE
③：DRAIN
0½0.1
JEITA：SC-59
JEDEC：Similar to TO-236
T TERMINAL CONNECTOR
①：GATE
②：SOURCE
③：DRAIN
ISAHAYA ELECTRONICS CORPORATION
0.8
0.95
G
0.5
2.9
1.90
0.95
0.5
0.3
ＩＮＫ0003AＸ SERIES
High speed switching
Silicon N-channel MOSFET
MAXIMUM RATING（Ｔ½＝２５℃）
SYMBOL
Ｖ
DSS
Ｖ
GSS
Ｉ
D
Ｐ
Ｄ
Ｔch
Ｔ½½½
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total
power
dissipation
（Ta=25℃）
Channel temperature
Range of Storage temperature
INK0003AT2
RATING
INK0003AU1
INK0003AM1
20
±8
200
150
+150
-55½+150
200
INK0003AC1
UNIT
V
V
mA
mW
℃
℃
125（※）
+125
-55½+125
ELECTRICAL CHARACTERISTICS（Ｔ½＝２５℃）
SYMBOL
PARAMETER
Drain-source breakdown voltage
Gate-source leak current
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Static drain-source on-state
resistance
Input capacitance
Output capacitance
Switching time
※package mounted on 9mm×19mm×1mm glass-epoxy substrate.
TEST CONDITION
I
D
=100μA, V
V
V
V
GS
DS
GS
V
(BR)DSS
I
GSS
I
DSS
V
th
|
Y
fs
|
R
DS(ON)
C
iss
C
oss
t
ON
t
OFF
=0V
MIN
20
-
-
0.6
-
-
-
-
-
-
LIMIT
TYP
-
-
-
-
300
0.9
34
8.5
14
85
MAX
-
±0.5
50
1.2
-
-
-
-
-
-
UNIT
V
μA
μA
V
mS
Ω
pF
pF
ns
=±5V, V
DS
=0V
=V
=20V ,V
GS
=0V
DS
GS
I
D
=250μA, V
DS
=10V, I
D
=0.1A
GS
I
D
=100mA, V
V
V
V
V
DS
DS
=4.0V
=10V, V
=10V, V
GS
GS
=0V,f=1MHz
=0V,f=1MHz
=5V , I
D
= 10mA
GS
=0½5V
DD
Switching time test condition
test circuit
5V
IN
OUT
5V
90%
R
L
0
10μs
V
DD
=5V
D.U.≦1%
Common source
Ta=25℃
50Ω
V
DD
input
waveform
0V
V
DD
10%
10%
output
waveform
V
DS(ON）
ton
90%
tr
toff
tf
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS
Ta=25℃
100
1.6V
1.5V
1.4V
ID -VDS
Ta=25℃
1
1.0V
ID -VDS(Low voltage region)
80
Drain current ID (mA)
Drain current ID (mA)
0.8
60
1.3V
0.6
0.95V
40
1.2V
0.4
0.9V
20
1.1V
VGS=1.0V
0.2
0.85V
VGS=0.8V
0
0
2
4
6
Drain-Source voltage VDS (V)
0
10
0
0.1
0.2
0.3
Drain-Source voltage VDS (V)
8
0.4
0.5
IDR -VDS
100
Drain reverse current IDR (mA)
Ta=25℃
VGS=0V
Drain current ID (mA)
100
1000
Ta=25℃
VDS=10V
ID -VGS
10
10
1
-0
-0.5
-1
-1.5
-2
Drain-Source voltage VDS (V)
1
0
1
2
3
4
5
Gate-Source voltage VGS (V)
|Yfs| - ID
1000
Forward transfer admittance
|Yfs| (mS)
Ta=25℃
VDS=10V
Drain-Source ON voltage
VDS(ON) (mV)
100
100
1000
Ta=25℃
VGS=4V
VDS(ON) -ID
10
10
1
1
1
10
100
1000
Drain current ID (mA)
0.1
1
10
Drain current ID (mA)
100
t - ID
10000
Ta=25℃
toff
Switching time t (ns)
Capacitance C (pF)
1000
100
C - VDS
Ciss
t½
100
10
Coss
10
ton
tr
Ta=25℃
VGS=0V
1
0.1
1
10
100
1
0.1
1
10
100
Drain current ID (mA)
Drain-Source voltage VDS (V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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·
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customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
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herein.
·
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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h
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Apr.2007
